PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 40V collector-emitter voltage, 0.6A continuous collector current, and 625mW power dissipation. This single-element silicon transistor is housed in a 3-pin TO-92 plastic package with dimensions up to 5.21mm(L) x 4.19mm(W) x 5.33mm(H). Operating temperature range is -65°C to 150°C, with a minimum transition frequency of 200MHz.
Central Semiconductor PN2907 technical specifications.
Download the complete datasheet for Central Semiconductor PN2907 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.