Silicon PNP epitaxial-base power transistor for general-purpose power amplifier and high-speed switching applications. It is rated for 100 V collector-emitter voltage, 3.0 A continuous collector current, and 40 W power dissipation at TC=25°C. The device is supplied in a through-hole TO-220 package with the collector connected to the tab and operates over a -65°C to +150°C junction and storage temperature range. Electrical characteristics include 1.2 V maximum collector-emitter saturation voltage at 3.0 A, 3.0 MHz typical transition frequency, and DC current gain of 25 minimum at 1.0 A.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
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