This through-hole NPN bipolar power transistor is rated for 100 V collector-emitter voltage, 25 A collector current, and 125 W power dissipation. It is intended for general-purpose amplifier and switching applications and is offered in the TO-218 package style. The standard TIP35C item is discontinued and stock-only, with box packaging of 100 units shown on the manufacturer part page.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Central Semiconductor TIP35C datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Central Semiconductor TIP35C technical specifications.
| Package/Case | TO-218-3 |
| Collector Emitter Breakdown Voltage | 100V |
| Max Collector Current | 25A |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Packaging | Bulk |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| RoHS | Not Compliant |
Download the complete datasheet for Central Semiconductor TIP35C to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.