The MBR30100CT is a Schottky diode with a peak reverse repetitive voltage of 100V and a maximum continuous forward current of 30A. It can handle a peak non-repetitive surge current of 200A and has a peak forward voltage of 0.95V. The diode is mounted through a hole and has an operating temperature range of -55 to 150°C. It is packaged in a TO-220AB transistor outline package with a plastic material and a pin pitch of 2.5mm.
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Changzhou Galaxy Century Microelectronics MBR30100CT technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 8.9 |
| Pin Pitch (mm) | 2.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | Schottky Diode |
| Configuration | Dual Common Cathode |
| Peak Reverse Repetitive Voltage | 100V |
| Maximum Continuous Forward Current | 30A |
| Peak Non-Repetitive Surge Current | 200A |
| Peak Forward Voltage | 0.95V |
| Peak Reverse Current | 200uA |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | -55 to 150°C |
| EU RoHS | Yes |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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