This device is an N-channel power MOSFET in a TO-220 package. It is rated for 85 V drain-source voltage and 120 A drain current. The typical RDS(ON) is 3.4 mΩ at VGS = 10 V, with a 4.1 mΩ maximum. The gate threshold voltage is specified from 2 V to 4 V, with typical total gate charge of 74 nC and typical input capacitance of 6050 pF.
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China Resource Microelectronics CRST041N08N technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 85V |
| Continuous Drain Current (ID) | 120A |
| Package | TO-220 |
| Polarity | N |
| RDS(ON) Typ @ VGS=10V | 3.4mΩ |
| RDS(ON) Max @ VGS=10V | 4.1mΩ |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge Typ | 74nC |
| Input Capacitance Typ | 6050pF |
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