This device is an N-channel power MOSFET rated for 100 V drain-to-source voltage and 120 A continuous drain current. It is offered in a TO-220 package with typical RDS(on) of 3.6 mΩ and maximum 4.5 mΩ at VGS = 10 V. The gate threshold voltage is specified from 2 V to 4 V, with typical total gate charge of 90 nC and typical input capacitance of 6722 pF.
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China Resource Microelectronics CRST045N10N technical specifications.
| Polarity | N-Channel |
| Package | TO-220 |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 120A |
| RDS(on) Typ @ VGS = 10 V | 3.6mΩ |
| RDS(on) Max @ VGS = 10 V | 4.5mΩ |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge Typ | 90nC |
| Input Capacitance Typ | 6722pF |
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