This N-channel MOSFET is rated for 100 V drain-to-source voltage and 120 A continuous drain current. It is supplied in a TO-220 package and specifies 3.6 mΩ typical and 4.5 mΩ maximum on-resistance at 10 V gate drive. Gate threshold voltage is 2 V to 4 V, with typical total gate charge of 90 nC and typical input capacitance of 6722 pF. The device is listed by the manufacturer in its 12 V to 300 V NMOS family.
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China Resource Microelectronics SKD503T/CRST045N10N technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 120A |
| Package | TO-220 |
| Polarity | N |
| RDS(on) Typ @ VGS=10V | 3.6mΩ |
| RDS(on) Max @ VGS=10V | 4.5mΩ |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge Typ | 90nC |
| Input Capacitance Typ | 6722pF |
Download the complete datasheet for China Resource Microelectronics SKD503T/CRST045N10N to view detailed technical specifications.
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