The GBU1006-G from Comchip is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a breakdown voltage of at least 600 volts and is available in a 4-pin R-PSIP-T4 package. This device is suitable for use in a variety of applications, including power supply and rectification circuits.
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Technical Specifications
Comchip GBU1006-G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Comchip GBU1006-G Datasheet
Download the complete datasheet for Comchip GBU1006-G to view detailed technical specifications.
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