NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Surface mount TO-236-3 package with a maximum power dissipation of 225mW. Operates with a transition frequency of 300MHz and a collector-emitter voltage of 1V. RoHS compliant and supplied on tape and reel in quantities of 3000.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Comchip MMBT2222A-G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 1V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
Comchip MMBT2222A-G Datasheet
Download the complete datasheet for Comchip MMBT2222A-G to view detailed technical specifications.
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