The MMBT3906-G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V. It can handle a continuous collector current of -200mA and a maximum collector current of 200mA. The transistor has a maximum power dissipation of 200mW and is packaged in a TO-236-3 surface mount package. It is RoHS compliant and available in quantities of 3000 per tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Comchip MMBT3906-G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.00709oz |
Compliance
| RoHS | Compliant |
Datasheet
Comchip MMBT3906-G Datasheet
Download the complete datasheet for Comchip MMBT3906-G to view detailed technical specifications.
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