The MMBT5401-G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 600mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a surface-mount SOT-23 package and is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Comchip MMBT5401-G technical specifications.
General
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 80 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | MMBT5401 |
| Transition Frequency | 100MHz |
| Weight | 0.00709oz |
Compliance
| RoHS | Compliant |
Datasheet
Comchip MMBT5401-G Datasheet
Download the complete datasheet for Comchip MMBT5401-G to view detailed technical specifications.
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