Silicon power transistor for general-purpose power amplifier and switching applications. The TIP35C variant is rated for 100 V collector-base and collector-emitter voltage, 25 A collector current, 40 A peak collector current, and 125 W power dissipation at case temperatures below 25°C. Maximum junction temperature is 150°C and storage range is -65°C to +150°C. The device is shown in a TO3PN non-isolated plastic package with the collector connected to the case and declares RoHS compliance.
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Comset Semiconductor TIP35C technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
