The CY7C1051H30-10BVXI is a high-performance 8-Mbit CMOS static RAM organized as 512K words by 16 bits. This device features advanced Error Correction Code (ECC) logic to provide improved reliability against soft errors. It operates within a wide voltage range of 2.2V to 3.6V and features a fast access time of 10 ns. The architecture includes an embedded hardware ECC block that performs single-bit error correction and detection without impacting performance. It is designed for industrial and communication applications requiring high reliability and low power consumption in a compact form factor.
CYPRESS SEMICONDUCTOR CORP CY7C1051H30-10BVXI technical specifications.
| Memory Density | 8Mbit |
| Organization | 512K x 16words x bits |
| Operating Voltage | 2.2 to 3.6V |
| Access Time | 10ns |
| Interface Type | Asynchronous |
| Operating Temperature | -40 to +85°C |
| Active Current (Icc) | 40mA |
| Standby Current (Isb2) | 14mA |
| Package Pin Count | 48pins |
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
Download the complete datasheet for CYPRESS SEMICONDUCTOR CORP CY7C1051H30-10BVXI to view detailed technical specifications.
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