S29AL008J70BFI020

A parallel NOR Flash memory device provides 8 Mbit (1M x 8 / 512K x 16) storage with a rapid 70 ns access time. Designed for 3.0V-only in-system programming, it operates across a 2.7V to 3.6V supply range and an industrial temperature spectrum of -40°C to +85°C. Features include a Bottom Boot sector architecture with a flexible sector structure, comprising 16 KB, 8 KB, 32 KB, and 64 KB sectors, alongside a 19-bit address bus width. This component ensures high reliability with 1,000,000 typical program/erase cycles per sector and 20 years minimum data retention. Power consumption is optimized with a 12 mA active read current, 30 mA active program/erase current, and a low 1 µA typical standby current, all housed within an 8.15 mm x 6.15 mm 48-ball VFBGA package. The S29AL008J is an 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. This Parallel NOR Flash device features Bottom Boot sector architecture and a 70ns access time, designed for in-system programming with a single 3V supply.