4Mb CMOS SRAM, 256K x 16 configuration, featuring 55ns access time. This asynchronous, volatile memory operates with a 2.2V to 3.6V supply voltage range and a nominal 3V. Packaged in a 44-pin TSOP (Type II) surface mount format, it supports a parallel interface and operates across an industrial temperature range of -40°C to 125°C.
Frequency1MHz
PackageTSOP
Current25mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Cypress CY62147EV30LL-55ZSXE technical specifications.
General
Access Time
55ns
Access Time-Max
55ns
Address Bus Width
18b
Package/Case
TSOP
Density
4Mb
Frequency
1MHz
Height
1.044mm
Interface
Parallel
Lead Free
Lead Free
Length
18.52mm
Max Frequency
18MHz
Max Operating Temperature
125°C
Max Supply Voltage
3.6V
Memory Size
4Mb
Memory Type
SDR, , Volatile, SRAM
Min Operating Temperature
-40°C
Min Supply Voltage
2.2V
Mount
Surface Mount
Number of Ports
1
Number of Words
256000
Operating Supply Voltage
3V
Package Quantity
135
Packaging
Tray
Radiation Hardening
No
RoHS Compliant
Yes
Series
MoBL®
Supply Current
25mA
Supply Voltage-Nom
3.6V
Sync/Async
Asynchronous
Temperature Grade
INDUSTRIAL
Width
10.262mm
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Cypress CY62147EV30LL-55ZSXE Datasheet
Download the complete datasheet for Cypress CY62147EV30LL-55ZSXE to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.