4Mb Parallel SRAM, featuring 55ns access time and an 18-bit address bus. This volatile memory component operates with a 2.2V to 3.6V supply voltage, consuming 25mA at 3V. It is a surface-mount device packaged in a 44-pin TSOP II, designed for asynchronous operation with a 16-bit word size. The component offers 256,000 words of memory and is RoHS compliant.
PackageTSOP
Current25mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Cypress CY62147EV30LL-55ZSXET technical specifications.
General
Access Time
55ns
Address Bus Width
18b
Package/Case
TSOP
Density
4Mb
Interface
Parallel
Lead Free
Contains Lead
Max Operating Temperature
125°C
Max Supply Voltage
3.6V
Memory Size
4Mb
Memory Type
SDR, , Volatile, SRAM
Min Operating Temperature
-40°C
Min Supply Voltage
2.2V
Mount
Surface Mount
Number of Ports
1
Number of Words
256000
Operating Supply Voltage
3V
Package Quantity
1000
Packaging
Tape and Reel
Radiation Hardening
No
RoHS Compliant
Yes
Series
MoBL®
Supply Current
25mA
Sync/Async
Asynchronous
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Cypress CY62147EV30LL-55ZSXET Datasheet
Download the complete datasheet for Cypress CY62147EV30LL-55ZSXET to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
