4Mb Parallel SRAM, featuring 55ns access time and an 18-bit address bus. This volatile memory component operates with a 2.2V to 3.6V supply voltage, consuming 25mA at 3V. It is a surface-mount device packaged in a 44-pin TSOP II, designed for asynchronous operation with a 16-bit word size. The component offers 256,000 words of memory and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Cypress CY62147EV30LL-55ZSXET datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Cypress CY62147EV30LL-55ZSXET technical specifications.
| Access Time | 55ns |
| Address Bus Width | 18b |
| Package/Case | TSOP |
| Density | 4Mb |
| Interface | Parallel |
| Lead Free | Contains Lead |
| Max Operating Temperature | 125°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 4Mb |
| Memory Type | SDR, , Volatile, SRAM |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.2V |
| Mount | Surface Mount |
| Number of Ports | 1 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MoBL® |
| Supply Current | 25mA |
| Sync/Async | Asynchronous |
| Word Size | 16b |
| RoHS | Compliant |
Download the complete datasheet for Cypress CY62147EV30LL-55ZSXET to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
