
4Mb Parallel SRAM, featuring 55ns access time and an 18-bit address bus. This volatile memory component operates with a 2.2V to 3.6V supply voltage, consuming 25mA at 3V. It is a surface-mount device packaged in a 44-pin TSOP II, designed for asynchronous operation with a 16-bit word size. The component offers 256,000 words of memory and is RoHS compliant.
Cypress CY62147EV30LL-55ZSXET technical specifications.
| Access Time | 55ns |
| Address Bus Width | 18b |
| Package/Case | TSOP |
| Density | 4Mb |
| Interface | Parallel |
| Lead Free | Contains Lead |
| Max Operating Temperature | 125°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 4Mb |
| Memory Type | SDR, , Volatile, SRAM |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.2V |
| Mount | Surface Mount |
| Number of Ports | 1 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MoBL® |
| Supply Current | 25mA |
| Sync/Async | Asynchronous |
| Word Size | 16b |
| RoHS | Compliant |
Download the complete datasheet for Cypress CY62147EV30LL-55ZSXET to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
