High-speed, asynchronous SRAM with 4Mb density, featuring a 12ns access time. This component offers a 256K x 16 configuration, utilizing a parallel interface and a 3.3V operating supply voltage. Packaged in a lead-free TSOP-II (44-pin) for surface mounting, it operates across a temperature range of -40°C to 125°C. Ideal for applications requiring fast, volatile memory storage.
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Cypress CY7C1041CV33-12ZSXE technical specifications.
| Access Time | 12ns |
| Access Time-Max | 12ns |
| Address Bus Width | 18b |
| Package/Case | TSOP |
| Density | 4Mb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Supply Current | 120mA |
| Max Supply Voltage | 3.6V |
| Memory Size | 4Mb |
| Memory Type | RAM, , SRAM - Asynchronous, Volatile, SRAM, SDR |
| Min Supply Voltage | 3V |
| Mount | Surface Mount |
| Number of Ports | 1 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 135 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 120mA |
| Supply Voltage-Nom | 3.6V |
| Sync/Async | Asynchronous |
| Word Size | 16b |
| RoHS | Compliant |
Download the complete datasheet for Cypress CY7C1041CV33-12ZSXE to view detailed technical specifications.
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