High-speed, asynchronous SRAM with 4Mb density, featuring a 12ns access time. This component offers a 256K x 16 configuration, utilizing a parallel interface and a 3.3V operating supply voltage. Packaged in a lead-free TSOP-II (44-pin) for surface mounting, it operates across a temperature range of -40°C to 125°C. Ideal for applications requiring fast, volatile memory storage.
PackageTSOP
Current120mA
MountingSurface Mount
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Technical Specifications
Cypress CY7C1041CV33-12ZSXE technical specifications.
General
Access Time
12ns
Access Time-Max
12ns
Address Bus Width
18b
Package/Case
TSOP
Density
4Mb
Interface
Parallel
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Supply Current
120mA
Max Supply Voltage
3.6V
Memory Size
4Mb
Memory Type
RAM, , SRAM - Asynchronous, Volatile, SRAM, SDR
Min Supply Voltage
3V
Mount
Surface Mount
Number of Ports
1
Number of Words
256000
Operating Supply Voltage
3.3V
Package Quantity
135
Packaging
Tray
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
120mA
Supply Voltage-Nom
3.6V
Sync/Async
Asynchronous
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Cypress CY7C1041CV33-12ZSXE Datasheet
Download the complete datasheet for Cypress CY7C1041CV33-12ZSXE to view detailed technical specifications.
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