32M-bit NOR Flash memory with a parallel interface, featuring a 4M x 8/2M x 16 word organization and 70ns maximum access time. This component offers asymmetrical block architecture with a boot block located at the bottom, supporting 22/21-bit address bus widths and 8/16-bit words per bit. It operates from a 3V supply, with programming voltages ranging from 2.7 to 3.6V and 8.5 to 9.5V, and a maximum operating current of 18mA. Packaged in a 48-pin FBGA (Fine Pitch Ball Grid Array) with dimensions of 9mm x 6mm x 0.67mm, it is designed for surface mounting and operates within a temperature range of -40°C to 85°C.
Cypress MBM29DL320BF70PBT-E1 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 9 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.67 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 32Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 18mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|8.5 to 9.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 70ns |
| Number of Words | 4M/2M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3V |
| Address Bus Width | 22/21bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 65786 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Cypress MBM29DL320BF70PBT-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.