64M-bit NOR Flash memory with parallel interface, featuring 8M x 8 or 4M x 16 word organization and a maximum access time of 60 ns. This integrated circuit offers asynchronous timing and supports boot block functionality, with the boot block locatable at the bottom or top. It operates from a typical 3V supply, with programming voltages ranging from 2.7 to 3.6V and 8.5 to 9.5V. The device is housed in a 48-pin RTSOP-I (Reverse Thin Small Outline Package Type I) surface-mount package with a 0.5mm pin pitch.
PackageRTSOP-I
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL640F60TR-E1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
RTSOP-I
Package Description
Reverse Thin Small Outline Package (Type I)
Pin Count
48
PCB
48
Package Length (mm)
12
Package Width (mm)
18.4
Package Height (mm)
1
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
60ns
Number of Words
8M/4M
Boot Block
Yes
Typical Operating Supply Voltage
3V
Address Bus Width
23/22bit
Location of Boot Block
Bottom|Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29DL640F60TR-E1 Datasheet
Download the complete datasheet for Cypress MBM29DL640F60TR-E1 to view detailed technical specifications.
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