64M-bit NOR Flash memory with a parallel interface, offering 8M x 8 or 4M x 16 word configurations. Features a 70ns maximum access time and operates from a 3V supply. This component utilizes an asymmetrical, sectored architecture with boot blocks located at the bottom or top. Packaged in a 48-pin Fine Pitch Ball Grid Array (FBGA) with a 0.8mm pin pitch, it supports surface mounting and operates within a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL640F70PBT-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
9
Package Width (mm)
8
Package Height (mm)
0.85
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
70ns
Number of Words
8M/4M
Boot Block
Yes
Typical Operating Supply Voltage
3V
Address Bus Width
23/22bit
Location of Boot Block
Bottom|Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29DL640F70PBT-E1 Datasheet
Download the complete datasheet for Cypress MBM29DL640F70PBT-E1 to view detailed technical specifications.
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