64M-bit NOR Flash memory with a parallel interface, organized as 4M x 16 bits. Features a 90ns maximum access time and operates from a 3.3V supply. This surface-mount component is housed in a 63-pin Fine Pitch Ball Grid Array (FBGA) package, measuring 11mm x 10mm x 0.67mm. It supports programming voltages from 3 to 3.6V and 11.5 to 12.5V, with a maximum operating current of 16mA. Operating temperature range is -40°C to 85°C.
Cypress MBM29LV652UE-90-TN-E1 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 11 |
| Package Width (mm) | 10 |
| Package Height (mm) | 0.67 |
| Mounting | Surface Mount |
| Density | 64Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 16mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Programming Voltage | 3 to 3.6|11.5 to 12.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 4M |
| Boot Block | No |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 22bit |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 65786 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Cypress MBM29LV652UE-90-TN-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.