
8M-bit NOR Flash memory, featuring a parallel interface and 3V/3.3V operation. This component offers 1M x 8 or 512K x 16 organization with a maximum access time of 120ns. It utilizes an asynchronous timing type and has a 20/19-bit address bus. The memory is housed in a 48-pin Fine Pitch Ball Grid Array (FBGA) package, suitable for surface mounting, and operates within a temperature range of -40°C to 85°C.
Cypress MBM29LV800BA-12PBT-SF2 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 9 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.67 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 8Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 25mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6V |
| Timing Type | Asynchronous |
| Maximum Access Time | 120ns |
| Number of Words | 1M/512K |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 20/19bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 65786 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Cypress MBM29LV800BA-12PBT-SF2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.