512M-bit NOR Flash memory with Serial (SPI, Dual SPI, Quad SPI) interface. Features 3V/3.3V operation, 14.5ns access time, and 24-pin BGA package. Supports 512M/256M/128M word configurations with 1/2/4 bits per word. Offers symmetrical block organization, sectored architecture, and boot block capability at bottom or top locations. Operates from -40°C to 105°C with a maximum operating current of 100mA.
PackageBGA
MountingSurface Mount
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Technical Specifications
Cypress S25FL512SAGBHVA10 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
BGA
Package Description
Ball Grid Array
Lead Shape
Ball
Pin Count
24
PCB
24
Package Length (mm)
8
Package Width (mm)
6
Package Height (mm)
1.2(Max) - 0.2(Min)
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Interface Type
Serial (SPI, Dual SPI, Quad SPI)
Maximum Operating Current
100mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Synchronous
Maximum Access Time
14.5ns
Number of Words
512M/256M/128M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
32bit
Location of Boot Block
Bottom|Top
Number of Bits per Word
1/2/4bit
Min Operating Temperature
-40°C
Max Operating Temperature
105°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320051
Schedule B
8542320050
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Cypress S25FL512SAGBHVA10 Datasheet
Download the complete datasheet for Cypress S25FL512SAGBHVA10 to view detailed technical specifications.
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