Industrial temperature grade parallel Flash memory IC with 67,108,864 words (64M x 8) capacity. Features a maximum access time of 96ns and operates with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.95V. Packaged in a 24-terminal FBGA (R-PBGA-B24) with bottom terminal position. AEC-Q100 screened for automotive applications.
Quick Jump:
Technical Specifications
Cypress S26KS512SDPBHI020 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 24 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B24 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.95 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | FLASH |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 96 |
| Screening Level | AEC-Q100 |
Compliance
| RoHS | Yes |
| Eccn Code | 3A991.B.1.A |
| HTS Code | 8542.32.00.51 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Cypress S26KS512SDPBHI020 Datasheet
Download the complete datasheet for Cypress S26KS512SDPBHI020 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.