Isolated Gate Driving Solutions for Power Density and Robustness
A technical comparison of isolated gate driving solutions for SJ MOSFETs, SiC MOSFETs, and GaN HEMTs, focusing on EiceDRIVER gate driver ICs versus pulse transformers.
Overview
This application note provides an in-depth analysis of isolated gate driving solutions designed to enhance system efficiency and power density in high-performance power conversion. It compares traditional pulse transformer-based designs with modern integrated solutions using isolated gate driver ICs and digital isolators. The evaluation covers critical parameters such as isolation levels, propagation delay, Common-Mode Transient Immunity (CMTI), parasitic leakage inductance, and PCB layout flexibility. The document offers specific guidance for driving Superjunction (SJ) MOSFETs, Silicon Carbide (SiC) MOSFETs, and Gallium Nitride (GaN) HEMTs, highlighting the EiceDRIVER GaN, 2EDi, 1EDB, 2EDN, and 1EDN-TDI product families in topologies like totem-pole PFC and resonant LLC converters.
Use Cases
- High-performance SMPS design
- EV fast chargers
- Solar PV inverters
- Telecom base stations
- Data center and server power supplies
- Industrial motor drives
Topics
Referenced Parts
Infineon
EiceDRIVER™ 2EDF7275K functional isolated gate driver available in the small LGA-13 package
1EDF5673F
Infineon
functional isolated EiceDRIVER™ GaN 1EDF5673F
1EDS5663H
Infineon
EiceDRIVER™ GaN 1EDS5663H and the EiceDRIVER™ 2EDS8265H are examples of gate driver ICs with robust input-to-output reinforced isolation
2EDS8265H
Infineon
EiceDRIVER™ 2EDS8265H are examples of gate driver ICs with robust input-to-output reinforced isolation
| 2EDF7275F | Infineon | EiceDRIVER™ 2EDF7275F are recommended to drive the CoolGaN™ power switches |
| 2EDF7275K | Infineon | EiceDRIVER™ 2EDF7275K functional isolated gate driver available in the small LGA-13 package |
| IPB60R105CFD7 | Infineon | 600 V CoolMOS™ CFD7 SJ MOSFET IPB60R105CFD7 |
| GT06-111-100 | ICE Components | the GT06-111-100 [13] has an E-T product of 100 V-μs |
| 1EDF5673F | Infineon | functional isolated EiceDRIVER™ GaN 1EDF5673F |
| 1EDS5663H | Infineon | EiceDRIVER™ GaN 1EDS5663H and the EiceDRIVER™ 2EDS8265H are examples of gate driver ICs with robust input-to-output reinforced isolation |
| 2EDS8265H | Infineon | EiceDRIVER™ 2EDS8265H are examples of gate driver ICs with robust input-to-output reinforced isolation |