This 600 V N-channel superjunction power MOSFET uses CoolMOS™ CFD7 technology and is housed in a D2PAK package. It is rated for 21 A continuous drain current, 79 A pulsed drain current, 105 mΩ maximum RDS(on), and 42 nC typical total gate charge at 10 V. The device is intended for resonant high-power SMPS topologies such as LLC and phase-shift full-bridge converters used in server, telecom, and EV charging systems. It operates from -55 °C to 150 °C and includes a fast recovery body diode with low stored energy in COSS and low reverse recovery charge.
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| Transistor Type | N-Channel Power MOSFET |
| Technology | CoolMOS™ CFD7 |
| Drain-Source Voltage | 600V |
| Breakdown Voltage | 600V |
| Continuous Drain Current | 21A |
| Pulsed Drain Current | 79A |
| Power Dissipation | 106W |
| On-Resistance RDS(on) | 105mΩ |
| Gate Charge Qg | 42nC |
| Gate Threshold Voltage | 3.5 to 4.5V |
| Operating Temperature | -55 to 150°C |
| Package | D2PAK |
| Mounting | SMT |
| Pin Count | 3Pins |
| Topology | PSFB (Phase shift full Bridge) and LLC |
| Special Features | Fast recovery diode |
| Qualification | Industrial |
| RoHS | Compliant |
| Halogen Free | Yes |
These are design resources that include the Infineon IPB60R105CFD7
A technical comparison of isolated gate driving solutions for SJ MOSFETs, SiC MOSFETs, and GaN HEMTs, focusing on EiceDRIVER gate driver ICs versus pulse transformers.
