A PNP Bipolar Junction Transistor (BJT) offers high voltage performance, featuring a 500V collector-emitter voltage (VCEO) and 500V collector-base voltage (VCBO), with a 5V emitter-base voltage (VEBO). It handles a continuous collector current (IC) of 150mA and a peak pulse current (ICM) of 500mA, with a power dissipation of 500mW. The component delivers a 60MHz transition frequency (fT) and a minimum DC current gain (hFE) of 100 at 50mA, 10V. Its maximum collector-emitter saturation voltage (VCE(sat)) is 500mV at 10mA, 50mA. Designed for surface mount applications in an SOT-23 package, it operates reliably across a wide temperature range of -55°C to +150°C. This device is RoHS compliant and classified as a 'Green' product, free from halogen and antimony.
Quick Jump:
Technical Specifications
DIODES INCORPORATED FMMT560TA technical specifications.
General
| transistor_type | PNP |
| collector_emitter_voltage_vceo_max | 500V |
| collector_base_voltage_vcbo_max | 500V |
| emitter_base_voltage_vebo_max | 5V |
| continuous_collector_current_ic | 150mA |
| peak_pulse_current_icm | 500mA |
| power_dissipation_pd | 500mW |
| dc_current_gain_hfe_min | 100 @ 50mA, 10V |
| collector_emitter_saturation_voltage_vce_sat_max | 500 mV @ 10mA, 50mA |
| transition_frequency_ft | 60MHz |
| operating_temperature_range | -55°C to +150°C |
| mounting_style | Surface Mount |
| moisture_sensitivity_level | MSL 1 |
Compliance
| RoHS Compliant | True |
| Halogen And Antimony Free | True |
| Green Device | True |
Datasheet
DIODES INCORPORATED FMMT560TA Datasheet
Download the complete datasheet for DIODES INCORPORATED FMMT560TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.