This silicon rectifier diode is rated for 1.0 A average forward rectified output current and 800 V peak repetitive reverse voltage. It uses a DO-41 molded plastic through-hole package with bright tin plated leads, cathode-band polarity marking, and an approximate weight of 0.30 g. The device provides 1.0 V maximum forward voltage at 1.0 A, 5 μA reverse current at 25°C, and 30 A non-repetitive peak forward surge capability. Operating and storage temperature range is -65°C to +150°C, and the device is specified with a lead-free finish and RoHS compliance.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes 1N4006 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Element Configuration | Single |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Max Reverse Current | 5uA |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 30A |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Diodes 1N4006 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
