The 1N4448HWSQ-7-F is a silicon rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum reverse voltage of 80V and a maximum power dissipation of 0.2W. The diode is available in a dual terminal configuration and is packaged in the R-PDSO-G2 package type.
Diodes 1N4448HWSQ-7-F technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 80 |
| Power Dissipation-Max | 0.2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
