This silicon rectifier diode is designed for single-phase, half-wave rectification and is rated for 3.0 A average rectified output current. It provides a 50 V repetitive peak reverse voltage rating and a 200 A non-repetitive peak forward surge current capability. The device is housed in a DO-201AD molded plastic package with tin-plated leads and a cathode band polarity mark. It operates over a junction and storage temperature range of -65°C to +150°C and is specified with low reverse leakage current and low forward voltage drop. The part is lead-free finished and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes 1N5400 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes 1N5400 technical specifications.
| Element Configuration | Single |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Max Reverse Current | 10uA |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 200A |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Diodes 1N5400 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
