PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 150mA maximum collector current. Operates with a -60V collector-base voltage and a -6V emitter-base voltage. Offers a 140MHz transition frequency and a 150mW maximum power dissipation. Packaged in a SOT-523 surface mount plastic package, this component is RoHS and REACH SVHC compliant.
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Diodes 2DA1774S-7-F technical specifications.
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 140MHz |
| Height | 0.75mm |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -50V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Compliant |
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