PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 2A. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 120MHz. Packaged in a SOT-89 surface mount case, this component operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. It is RoHS and REACH SVHC compliant.
Frequency120MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DB1188R-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
800mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
800mV
Emitter Base Voltage (VEBO)
5V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
1.5mm
hFE Min
180
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
32V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
120MHz
Weight
0.001834oz
Width
2.48mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DB1188R-13 Datasheet
Download the complete datasheet for Diodes 2DB1188R-13 to view detailed technical specifications.
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