
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current (IC). Operates with a 300MHz Gain Bandwidth Product (fT) and a minimum hFE of 270. Packaged in a SOT-323 surface mount plastic package, this component offers a -55°C to 150°C operating temperature range and 500mW power dissipation.
Diodes 2DB1694-7 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -380mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 380mV |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 270 |
| Length | 2.15mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 300MHz |
| Weight | 0.000212oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes 2DB1694-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
