PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current (IC). Operates with a 300MHz Gain Bandwidth Product (fT) and a minimum hFE of 270. Packaged in a SOT-323 surface mount plastic package, this component offers a -55°C to 150°C operating temperature range and 500mW power dissipation.
Frequency300MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DB1694-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-380mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
380mV
Emitter Base Voltage (VEBO)
-6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
270
Length
2.15mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
Weight
0.000212oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DB1694-7 Datasheet
Download the complete datasheet for Diodes 2DB1694-7 to view detailed technical specifications.
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