PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 12V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 180MHz. Packaged in a SOT-89 surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
Frequency180MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DB1713-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
250mV
Emitter Base Voltage (VEBO)
-6V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
1.5mm
hFE Min
270
Length
4.5mm
Max Breakdown Voltage
12V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
180MHz
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DB1713-13 Datasheet
Download the complete datasheet for Diodes 2DB1713-13 to view detailed technical specifications.
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