PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 2A. Operates with a transition frequency of 200MHz and a maximum power dissipation of 900mW. Packaged in a surface-mount SOT-89 plastic package, this component is RoHS compliant and operates across a temperature range of -55°C to 150°C.
Frequency200MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DB1714-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-370mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
370mV
Emitter Base Voltage (VEBO)
6V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1.4mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
30V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DB1714-13 Datasheet
Download the complete datasheet for Diodes 2DB1714-13 to view detailed technical specifications.
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