NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and 150mA Continuous Collector Current (IC). Operates with a 180MHz Gain Bandwidth Product and a maximum power dissipation of 150mW. Housed in an ultra-miniature SOT-523 plastic package for surface mounting. Compliant with RoHS and REACH SVHC standards.
Frequency180MHz
PackageSOT-523
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Diodes 2DC4617R-7-F technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
7V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
0.75mm
hFE Min
180
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
50V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DC4617R-7-F Datasheet
Download the complete datasheet for Diodes 2DC4617R-7-F to view detailed technical specifications.
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