NPN bipolar junction transistor for small signal applications. Features a 32V collector-emitter breakdown voltage and 40V collector-base voltage. Operates with a maximum collector current of 2A and a power dissipation of 1W. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 220MHz. Packaged in a SOT-89 surface-mount plastic case, this silicon transistor is RoHS and REACH SVHC compliant.
Frequency220MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes 2DD1766Q-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes 2DD1766Q-13 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 800mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 220MHz |
| Gain Bandwidth Product | 220MHz |
| Height | 1.5mm |
| hFE Min | 120 |
| Length | 4.5mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 220MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes 2DD1766Q-13 Datasheet
Download the complete datasheet for Diodes 2DD1766Q-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.