NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 2A maximum collector current and 12V collector-emitter breakdown voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. Packaged in a SOT-89 surface-mount plastic package, this component offers a gain bandwidth product of 170MHz.
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes 2DD2661-13 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 180mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 170MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes 2DD2661-13 Datasheet
Download the complete datasheet for Diodes 2DD2661-13 to view detailed technical specifications.
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