This device is a silicon NPN small-signal bipolar transistor intended for switching applications. It is specified for up to 40 V collector-emitter voltage and 0.1 A maximum collector current, with a maximum power dissipation of 0.35 W. The transistor is supplied in a 3-terminal TO-92 through-hole package with bottom terminals and a plastic epoxy body. Published secondary-source characteristics list a minimum DC current gain of 30, a nominal transition frequency of 250 MHz, and a maximum collector-base capacitance of 4 pF. The maximum operating temperature is 150 °C and the listed lifecycle status is discontinued.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-92 |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| REACH | unknown |
| Military Spec | False |
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