N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 plastic package. Features a continuous drain current of 115mA, a drain-to-source voltage rating of 60V, and a maximum power dissipation of 370mW. Offers a low drain-to-source resistance of 7.5 Ohms and operates within a temperature range of -55°C to 150°C. Includes input capacitance of 50pF and switching times of 7ns (turn-on) and 11ns (turn-off).
PackageSOT-23-3
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002-7 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
115mA
Current Rating
115mA
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Contains Lead
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
370mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Polarity
N-CHANNEL
Rds On Max
7.5R
Reach SVHC Compliant
Yes
RoHS Compliant
No
Turn-Off Delay Time
11ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
0.000289oz
Width
1.3mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes 2N7002-7 Datasheet
Download the complete datasheet for Diodes 2N7002-7 to view detailed technical specifications.
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