N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 plastic package. Features a continuous drain current of 115mA, a drain-to-source voltage rating of 60V, and a maximum power dissipation of 370mW. Offers a low drain-to-source resistance of 7.5 Ohms and operates within a temperature range of -55°C to 150°C. Includes input capacitance of 50pF and switching times of 7ns (turn-on) and 11ns (turn-off).
Sign in to ask questions about the Diodes 2N7002-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes 2N7002-7 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 115mA |
| Current Rating | 115mA |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | N-CHANNEL |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 60V |
| Weight | 0.000289oz |
| Width | 1.3mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes 2N7002-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
