N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 plastic package. Features a continuous drain current of 115mA, a drain-to-source voltage rating of 60V, and a maximum power dissipation of 370mW. Offers a low drain-to-source resistance of 7.5 Ohms and operates within a temperature range of -55°C to 150°C. Includes input capacitance of 50pF and switching times of 7ns (turn-on) and 11ns (turn-off).
PackageSOT-23-3
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 115mA |
| Current Rating | 115mA |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | N-CHANNEL |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 60V |
| Weight | 0.000289oz |
| Width | 1.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes 2N7002-7 Datasheet
Download the complete datasheet for Diodes 2N7002-7 to view detailed technical specifications.
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