
N-Channel, 2-element, silicon, metal-oxide semiconductor field-effect transistor designed for switching applications. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 230mA. Offers a low Rds On of 7.5R and a maximum power dissipation of 310mW. Packaged in an ultra-small, plastic SOT-363 (R-PDSO-G6) surface-mount package with gull-wing terminals. Operating temperature range from -55°C to 150°C.
Diodes 2N7002DW-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 230mA |
| Current Rating | 115mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| JESD-30 Code | R-PDSO-G6 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 60V |
| Weight | 0.000265oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes 2N7002DW-7 to view detailed technical specifications.
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