DIODES

2N7002DW-7

Datasheet

2 N-Ch MOSFET, 60V, 230mA ID, 7.5R Rds On, SOT-363

Diodes

2N7002DW-7

Name: 2N7002DW-7 Diodes
Brand: Diodes
SKU: 2N7002DW-7

2 N-Ch MOSFET, 60V, 230mA ID, 7.5R Rds On, SOT-363

N-Channel, 2-element, silicon, metal-oxide semiconductor field-effect transistor designed for switching applications. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 230mA. Offers a low Rds On of 7.5R and a maximum power dissipation of 310mW. Packaged in an ultra-small, plastic SOT-363 (R-PDSO-G6) surface-mount package with gull-wing terminals. Operating temperature range from -55°C to 150°C.

PackageSOT-363

Current Rating115mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes 2N7002DW-7 technical specifications.

General

Package/Case	SOT-363
Continuous Drain Current (ID)	230mA
Current Rating	115mA
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	4.4R
Drain to Source Voltage (Vdss)	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
JESD-30 Code	R-PDSO-G6
Lead Free	Contains Lead
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	310mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Cut Tape
Polarity	N-CHANNEL
Power Dissipation	200mW
Rds On Max	7.5R
Reach SVHC Compliant	Yes
RoHS Compliant	No
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-Off Delay Time	11ns
Turn-On Delay Time	7ns
DC Rated Voltage	60V
Weight	0.000265oz
Width	1.35mm