2N7002DW-7-F

Datasheet

N-Channel JFET, 60V, 115mA, 2-Element, SOT-363, SMD

Diodes

2N7002DW-7-F

Name: 2N7002DW-7-F Diodes
Brand: Diodes
SKU: 2N7002DW-7-F

Active

N-Channel JFET, 60V, 115mA, 2-Element, SOT-363, SMD

N-channel, dual-element, silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 60V Drain to Source Breakdown Voltage and a continuous drain current of 115mA. Offers a low Drain-source On Resistance of 7.5 Ohms maximum. Packaged in a compact SOT-363 surface mount package, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C.

PackageSOT-363

Current Rating115mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

General

Package/Case	SOT-363
Continuous Drain Current (ID)	115mA
Current Rating	115mA
Drain to Source Breakdown Voltage	70V
Drain to Source Resistance	4.4R
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	7.5R
Dual Supply Voltage	60V
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
Lead Free	Lead Free
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Nominal Vgs	2V
Number of Channels	2
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	400mW
Radiation Hardening	No
Rds On Max	7.5R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Threshold Voltage	2V
Turn-Off Delay Time	11ns
Turn-On Delay Time	7ns
DC Rated Voltage	60V
Weight	0.000212oz
Width	1.35mm