N-channel, dual-element, silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 60V Drain to Source Breakdown Voltage and a continuous drain current of 115mA. Offers a low Drain-source On Resistance of 7.5 Ohms maximum. Packaged in a compact SOT-363 surface mount package, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
PackageSOT-363
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002DW-7-F technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
115mA
Current Rating
115mA
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
7.5R
Dual Supply Voltage
60V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
400mW
Radiation Hardening
No
Rds On Max
7.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
11ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2N7002DW-7-F Datasheet
Download the complete datasheet for Diodes 2N7002DW-7-F to view detailed technical specifications.
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