N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features 60V drain-source breakdown voltage and 380mA continuous drain current. Offers a low drain-source on-resistance of 2 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23 surface-mount plastic package. Includes fast switching times with turn-on delay of 3.9ns and fall time of 9.9ns.
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| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 380mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 15.7ns |
| Turn-On Delay Time | 3.9ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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