N-Channel Silicon Metal-Oxide Semiconductor FET, 2-element configuration, offering a continuous drain current of 280mA and a drain-to-source breakdown voltage of 60V. This surface mount transistor features a low drain-to-source resistance of 13.5 Ohms and a maximum power dissipation of 150mW. Packaged in an ultra-small SOT-563 plastic package with tin matte plating, it operates within a temperature range of -55°C to 150°C.
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Diodes 2N7002VC-7 technical specifications.
| Package/Case | SOT-563 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 13.5R |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
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