2N7002VC-7

N-Channel Silicon Metal-Oxide Semiconductor FET, 2-element configuration, offering a continuous drain current of 280mA and a drain-to-source breakdown voltage of 60V. This surface mount transistor features a low drain-to-source resistance of 13.5 Ohms and a maximum power dissipation of 150mW. Packaged in an ultra-small SOT-563 plastic package with tin matte plating, it operates within a temperature range of -55°C to 150°C.