N-channel MOSFET transistor, surface mountable in a SOT-323 package. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 115mA. Offers a maximum drain-source on-resistance (Rds On) of 7.5 Ohms and a gate-source voltage (Vgs) up to 20V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. RoHS compliant and supplied on tape and reel.
PackageSOT-323
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002W-7-F technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
115mA
Current Rating
115mA
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
2.6R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
7.5R
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200mW
Radiation Hardening
No
Rds On Max
7.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
11ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2N7002W-7-F Datasheet
Download the complete datasheet for Diodes 2N7002W-7-F to view detailed technical specifications.
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