PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Max Collector Current (IC). Operates with a 200MHz Gain Bandwidth Product (fT) and a 300mW Power Dissipation. Packaged in a SOT-23 surface-mount plastic case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
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Diodes BC858B-7-F technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| Length | 3.05mm |
| Max Collector Current | 100mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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