N-Channel and P-Channel MOSFET, 30V Drain-Source Voltage, 2.1A Continuous Drain Current, and 120mΩ Max Drain-Source On-Resistance. This dual-element silicon Metal-Oxide-Semiconductor FET features a 2.075mm width, 3.08mm length, and 0.78mm height in a DFN3020B-8 surface-mount package. Operating from -55°C to 150°C, it offers fast switching with a 1.5ns turn-on delay and 7.5ns fall time, and is RoHS and REACH SVHC compliant.
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Diodes ZXMC3AMCTA technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 210mR |
| Fall Time | 7.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.78mm |
| Input Capacitance | 190pF |
| Lead Free | Lead Free |
| Length | 3.08mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 11.3ns |
| Turn-On Delay Time | 1.5ns |
| Width | 2.075mm |
| RoHS | Compliant |
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