PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Operates with a transition frequency of 100MHz and a maximum power dissipation of 310mW. Packaged in a 3-pin SOT-23 plastic surface-mount package with tin-matte contact plating. Compliant with RoHS and REACH SVHC standards.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC807-16-7-F technical specifications.
General
Package/Case
SOT-23
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC807-16-7-F Datasheet
Download the complete datasheet for Diodes BC807-16-7-F to view detailed technical specifications.
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