DIODES

BC807-25-7-F

Datasheet

PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23

Diodes

BC807-25-7-F

Name: BC807-25-7-F Diodes
Brand: Diodes
SKU: BC807-25-7-F

PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23

PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23 plastic package. Features a 45V Collector Emitter Breakdown Voltage (VCEO), 500mA Max Collector Current (IC), and 100MHz Gain Bandwidth Product. Offers a Collector Emitter Saturation Voltage of -700mV and an Emitter Base Voltage (VEBO) of 5V. Designed for surface mount applications with lead-free and RoHS compliance.

Frequency100MHz

PackageSOT-23

MountingSurface Mount

PolarityPNP

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Technical Specifications

Diodes BC807-25-7-F technical specifications.

General

Package/Case	SOT-23
Collector Emitter Breakdown Voltage	45V
Collector Emitter Saturation Voltage	-700mV
Collector Emitter Voltage (VCEO)	45V
Collector-emitter Voltage-Max	700mV
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
Height	1mm
Lead Free	Lead Free
Length	3.05mm
Max Breakdown Voltage	25V
Max Collector Current	500mA
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	310mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	PNP
Power Dissipation	310mW
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	100MHz
Weight	0.000282oz
Width	1.4mm