PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Operates with a 100MHz transition frequency and a 700mV collector-emitter saturation voltage. Packaged in a 3-pin SOT-23 surface-mount plastic package with tin-matte plating, suitable for tape and reel deployment. Rated for operation between -65°C and 150°C with a maximum power dissipation of 310mW.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC807-40-7-F technical specifications.
General
Package/Case
SOT-23
Collector Emitter Breakdown Voltage
-45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC807-40-7-F Datasheet
Download the complete datasheet for Diodes BC807-40-7-F to view detailed technical specifications.
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