PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Operates with a 100MHz transition frequency and a 700mV collector-emitter saturation voltage. Packaged in a 3-pin SOT-23 surface-mount plastic package with tin-matte plating, suitable for tape and reel deployment. Rated for operation between -65°C and 150°C with a maximum power dissipation of 310mW.
Sign in to ask questions about the Diodes BC807-40-7-F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes BC807-40-7-F technical specifications.
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | -45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Length | 3.05mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BC807-40-7-F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
